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SIHP065N60E-GE3

Part No SIHP065N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 40A TO220AB / N-Channel 600 V 40A (Tc) 250W (Tc) Through Hole TO-220AB
Datasheet
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series E
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP065
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356570-SIHP065N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP065N60E-GE3 CAD Model

Description

The SIHP065N60E-GE3 is an N-channel MOSFET transistor designed for a wide range of electronic applications. Vishay Siliconix is the manufacturer.

  • FET Type: N-Channel
  • Technology: MOSFET
  • Voltage - Drain to Source (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Gate Charge (Qg) @ Vgs: 98nC @ 10V
  • Package / Case: TO-220-3
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.5801 $57.4806
13+ $7.8606 $102.1878
20+ $7.6149 $152.2980
28+ $7.3693 $206.3404
36+ $7.1236 $256.4496
47+ $6.3867 $300.1749
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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