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SIHP18N60E-GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIHP18N60E-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHP18N60E-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	202mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	92 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1640 pF @ 100 V
Power Dissipation (Max)	179W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	SIHP18
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277879-SIHP18N60E-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHP18N60E-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SIHP18N60E-GE3 MOSFET is an N-channel metal oxide semiconductor field-effect transistor with a drain to source voltage (Vdss) of 600V.

Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Dimensions: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Mounting: Through Hole
Drive Voltage (Max Rds On, Min Rds On): 10V

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