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Same model may have multiple batches, images only for reference.
SIHP35N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP35N60EF-GE3

Part No SIHP35N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 32A TO220AB
Datasheet
SIHP35N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series EF
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2568 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP35
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1006619-SIHP35N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP35N60EF-GE3 CAD Model

Description

The 1006619-SIHP35N60EF-GE3 is a single N-channel MOSFET designed for through-hole mounting manufactured by [Manufacturer name is missing].

  • Package: Tube
  • Standard Package: 50 pieces
  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 32A
  • On-Resistance: 97mOhm
  • Gate Charge: 134nC
  • Input Capacitance: 2568pF
  • Operating Temperature: -55°C to 150°C

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