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SIHP5N50D-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHP5N50D-E3

Part No SIHP5N50D-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5.3A TO220AB / Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-220AB
Datasheet
SIHP5N50D-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 325pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 104W (Tc)
Rds On (Maximum) @ Id, Vgs 1.5 Ohm @ 2.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 794399-SIHP5N50D-E3
Popularity Medium
Supply and Demand Status Limited
Family Name SiHP5N50D
Introduction Date April 29, 2012
ECCN EAR99
Country of Origin China
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian SIHP5N50D-E3 CAD Model

Description

The Vishay Siliconix SIHP5N50D-E3 is a Vishay Siliconix high-quality MOSFET.

  • Package: TO-220-3
  • Maximum Power Dissipation: 104W
  • Maximum Drain-Source Voltage: 500V
  • Channel Type: N
  • Gate-Source Voltage: ±30V
  • Input Capacitance (Maximum): 325pF @ 100V
  • Gate Charge (Maximum): 20nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0922 $65.5320
145+ $0.8962 $129.9490
225+ $0.8682 $195.3450
310+ $0.8402 $260.4620
400+ $0.8123 $324.9200
535+ $0.7282 $389.5870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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