The SIHU3N50D-E3 is an N-channel MOSFET that features a drain-to-source voltage of 500V and a continuous drain current of 3A @ 25°C. With a maximum Rds On of 3.2Ohm @ 2.5A and 10V, this MOSFET is suitable for use in discrete semiconductor products and transistors. The SIHU3N50D-E3 is available in a TO-251-3 Short Leads, IPak, TO-251AA package and has a gate charge (Qg) of 12 nC @ 10V. The input capacitance (Ciss) is 175 pF @ 100V, and the maximum gate-source voltage (Vgs) is ±30V. This MOSFET is designed to operate in a temperature range of -55°C to 150°C and is ECCN EAR99 compliant.