The SIJ484DP-T1-GE3 is an N-channel MOSFET manufactured by Vishay.

• Product Type: discrete semiconductor product
• Power Dissipation (Ta): 5W
• Power Dissipation (Tc): 27.7W
• Drive Voltage (Max Rds On): 4.5V
• Drive Voltage (Min Rds On): 10V
• Max Rds On (Id,Vgs): 6.3 mOhm @ 10A, 10V
• Maximum Gate-Source Voltage: ±20V
• Drain-Source Breakdown Voltage: 30V
• Maximum Gate Charge: 45nC @ 10V
• Maximum Input Capacitance: 1600pF @ 15V
• Package: PowerPAK SO-8
• Operating Temperature: -55°C to 150°C (TJ)
• Application: commonly used in various electronic circuits and devices