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Same model may have multiple batches, images only for reference.
SIJ800DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIJ800DP-T1-GE3

Part No SIJ800DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 20A PPAK SO-8 / Trans MOSFET N-CH 40V 20A 5-Pin(4+Tab) PowerPAK SO T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2400pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 4.2W (Ta), 35.7W (Tc)
Rds On (Maximum) @ Id, Vgs 9.5 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 794402-SIJ800DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SiJ800DP
Introduction Date May 19, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SIJ800DP-T1-GE3 CAD Model

Description

The SIJ800DP-T1-GE3 is a Vishay Siliconix MOSFET component.

  • Series: TrenchFET
  • Package: PowerPAK SO-8
  • Continuous Drain Current (Id): 20A (Tc)
  • Drain Source Voltage: 40V
  • Channel Type: N
  • Gate-Source Threshold Voltage (Vgs(th)): 3V @ 250μA
  • Maximum Gate Charge (Qg) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 2400pF @ 20V
  • Maximum Power Dissipation: 4.2W (Ta), 35.7W (Tc)
  • Maximum Rds On @ Id, Vgs: 9.5 mOhm @ 20A @ 10V
  • Mounting: SMD
  • Operating Temperature Range (TJ): -55°C to 150°C
  • REACH: Unaffected
  • ECCN: EAR99

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