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Same model may have multiple batches, images only for reference.
SIR1309DP-T1-GE3 Vishay – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

SIR1309DP-T1-GE3

Part No SIR1309DP-T1-GE3
Manufacturer Vishay
Catalog TRANSISTORS
Description MOSFETs POWRPK       P       CHAN  30V
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Manufacturer Vishay
Technology Si
Mounting Style SMD/SMT
Package / Case PowerPAK SO-8
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 65.7 A
Rds On - Drain-Source Resistance 7.3 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 28 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 56.8 W
Channel Mode Enhancement
Series SiR1309DP
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Configuration Single
Transistor Type 1 P-Channel
Brand Vishay Semiconductors
Forward Transconductance - Min 37 S
Fall Time 8 ns
Product Type MOSFETs
Rise Time 7 ns
Standard Pack Qty 3000
Subcategory Transistors
Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 12 ns
Ultra Librarian 3D Model Ultra Librarian SIR1309DP-T1-GE3 CAD Model

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