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Same model may have multiple batches, images only for reference.
SIR158DP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIR158DP-T1-RE3

Part No SIR158DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIR158DP-T1-RE3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen III
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4980 pF @ 15 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR158
Other Names SIR158DP-T1-RE3DKR,SIR158DP-T1-RE3CT,SIR158DP-T1-RE3TR,SIR158DP-T1-RE3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277680-SIR158DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR158DP-T1-RE3 CAD Model

Description

The SIR158DP-T1-RE3 from Vishay Siliconix is a N-Channel MOSFET (Metal Oxide) transistor from the TrenchFET® Gen III series.

  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id) @ 25°C: 60A (Tc)
  • Maximum On Resistance: 1.8mOhm @ 20A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
  • Maximum Vgs: ±20V
  • Operating Temperature: -55°C ~ 150°C (TJ)

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