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SIR330DP-T1-GE3

Part No SIR330DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 27.7W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096464-SIR330DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIR330DP-T1-GE3 CAD Model

Description

The SIR330DP-T1-GE3 is a N-Channel MOSFET manufactured by Vishay.

  • Mounting: SMD (SMT)
  • Package: PowerPAK SO-8
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 35A (Tc)
  • Maximum Rds On @ Id, Vgs: 5.6 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 1300pF @ 15V

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