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SIR403EDP-T1-GE3

Part No SIR403EDP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 40A PPAK 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 153nC @ 10V
Max Input Capacitance 4620pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 5W (Ta), 56.8W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 211728-SIR403EDP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR403EDP-T1-GE3 CAD Model

Description

The Vishay SIR403EDP-T1-GE3 is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Polarity: P-channel
  • Power Dissipation: 5W (Ta) and 56.8W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 40A (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Maximum Gate Charge: 153nC @ 10V
  • Maximum Input Capacitance: 4620pF @ 15V
  • Maximum Rds On @ Id, Vgs: 6.5 mOhm @ 13A, 10V
  • Case/Package: PowerPAK SO-8
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8557 $51.3420
145+ $0.7021 $101.8045
225+ $0.6802 $153.0450
305+ $0.6583 $200.7815
395+ $0.6363 $251.3385
530+ $0.5705 $302.3650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,709 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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