The SIR428DP-T1-GE3 is a Power MOSFET from Vishay Siliconix, designed for efficient power switching applications. It is an n-channel device housed in a PowerPAK SO-8 single package, optimized for low on-resistance and fast switching speeds. This MOSFET is part of Vishay's broad portfolio of power management solutions, offering a balance of performance and reliability. The 'GE3' suffix indicates that this part is halogen-free and RoHS compliant.

Applications:

• Synchronous Rectification
• DC-DC Converters
• Power Management in Portable Devices
• Load Switching
• Motor Control

Features:

• Low On-Resistance: Reduces conduction losses and improves efficiency.
• Fast Switching Speed: Minimizes switching losses at higher frequencies.
• Logic Level Gate Drive: Allows direct drive from microcontrollers and other logic devices.
• TrenchFET® Power MOSFET Technology: Provides high cell density for low on-resistance.
• PowerPAK® SO-8 Package: Compact footprint with excellent thermal performance.
• Halogen-Free and RoHS Compliant: Environmentally friendly.

Benefits:

• Increased System Efficiency: Low on-resistance and fast switching minimize power losses.
• Compact Design: Small footprint allows for high-density designs.
• Simplified Gate Drive: Logic level gate drive simplifies circuit design and reduces component count.
• Improved Thermal Performance: PowerPAK SO-8 package efficiently dissipates heat.
• Enhanced Reliability: Robust design ensures stable operation in demanding applications.
• Environmentally Friendly: Halogen-free and RoHS compliant.

Additional Details:

The SIR428DP-T1-GE3 features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 16A (depending on mounting and thermal conditions). The on-resistance (RDS(on)) is typically very low, which minimizes power dissipation and improves efficiency. The gate threshold voltage (VGS(th)) is designed for logic-level compatibility, typically between 1V and 3V. The PowerPAK SO-8 package offers excellent thermal characteristics, enabling efficient heat dissipation and high power density. It is surface mountable, allowing for automated assembly and compact board layouts. This MOSFET is suitable for a wide range of applications requiring efficient and reliable power switching. The operating temperature range is typically -55°C to +150°C.