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SIR466DP-T1-GE3 Vishay SIR466DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SIR466DP-T1-GE3 Vishay SIR466DP-T1-GE3 Real Image
SIR466DP-T1-GE3 Vishay SIR466DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR466DP-T1-GE3

Part No SIR466DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SIR466DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 2730pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028760-SIR466DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR466DP-T1-GE3 CAD Model

Description

The Vishay SIR466DP-T1-GE3 is an N-Channel MOSFET that is suitable for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A @ 25°C
  • Maximum Rds On: 3.5 mOhm @ 15A and 10V
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Input Capacitance: 2730pF @ 15V
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1792 $53.0640
95+ $1.1045 $104.9275
145+ $1.0672 $154.7440
205+ $0.9926 $203.4830
265+ $0.9553 $253.1545
330+ $0.9180 $302.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,980 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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