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Same model may have multiple batches, images only for reference.
SIR472DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR472DP-T1-GE3

Part No SIR472DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A PPAK SO-8
Datasheet
SIR472DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 820pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.9W (Ta), 29.8W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 13.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028763-SIR472DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR472DP-T1-GE3 CAD Model

Description

The Vishay SIR472DP-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 20A at 25°C.

  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 23nC @ 10V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 43,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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