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SIR626LDP-T1-RE3

Part No SIR626LDP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 30 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR626
Other Names SIR626LDP-T1-RE3CT,SIR626LDP-T1-RE3TR,SIR626LDP-T1-RE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277647-SIR626LDP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR626LDP-T1-RE3 CAD Model

Description

The SIR626LDP-T1-RE3 from Vishay Siliconix is an N-Channel MOSFET designed for use in various electronic devices.

  • Mounting: SMD technology
  • Package: PowerPAK SO-8
  • Maximum Drain to Source Voltage: 60V
  • Continuous Drain Current: 45.6A @ 25°C
  • Low Gate Charge: 135 nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4662 $51.3170
85+ $1.2031 $102.2635
130+ $1.1655 $151.5150
180+ $1.1279 $203.0220
230+ $1.0903 $250.7690
310+ $0.9775 $303.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,362 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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