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SIR690DP-T1-GE3

Part No SIR690DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 34.4A PPAK SO-8  /  N-Channel 200 V 34.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series ThunderFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 34.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 7.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1935 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR690
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIR690DP-T1-GE3DKR,SIR690DP-T1-GE3TR,SIR690DP-T1-GE3CT
Standard Package 3,000
Win Source Part Number 1003041-SIR690DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIR690DP-T1-GE3 CAD Model

Description

The SIR690DP-T1-GE3 electronic component is a high power MOSFET designed for use in various electronic devices, including computers, mobile phones, and other digital devices.

  • Manufacturer: Vishay Siliconix
  • Maximum Power Dissipation: 104W (Tc)
  • Maximum Gate Charge: 37 nC @ 7.5 V
  • Package: PowerPAK® SO-8
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,420 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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