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Same model may have multiple batches, images only for reference.
SIR798DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR798DP-T1-GE3

Part No SIR798DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A PPAK SO-8
Datasheet
SIR798DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.05Ohm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR798
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 324105-SIR798DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIR798DP-T1-GE3 CAD Model

Description

The SIR798DP-T1-GE3 is a MOSFET transistor from Vishay.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 60A @ 25°C
  • On-Resistance (Rds On): 2.05Ohm @ 20A and 10V gate-source voltage (Vgs)
  • Gate Threshold Voltage (Vgs(th)): 2.5V @ 250μA
  • Maximum Power Dissipation: 83W
  • Gate Charge (Qg): 130nC @ 10V gate-source voltage
  • Input Capacitance (Ciss): 5050pF @ 15V drain-source voltage
  • Operating Temperature Range: -55°C to 150°C

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