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SIR800DP-T1-GE3

Part No SIR800DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 133nC @ 10V
Max Input Capacitance 5125pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 2.3 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096479-SIR800DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIR800DP-T1-GE3 CAD Model

Description

The product is manufactured by Vishay and is available in PowerPAK SO-8 case/package.

  • Case/Package: PowerPAK SO-8
  • Supply and Demand Status: Limited
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 2.3 mOhm @ 15A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8880 $51.9840
43+ $2.3696 $101.8928
66+ $2.2956 $151.5096
91+ $2.2215 $202.1565
117+ $2.1475 $251.2575
156+ $1.9253 $300.3468
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,860 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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