The 1003609-SIR826BDP-T1-RE3 is a single N-channel MOSFET that is designed for high-speed switching applications.

• Manufacturer:Vishay Siliconix
• Type: MOSFET (Single N-Channel)
• Packaging: Tape and Reel
• Standard Package: 3,000
• Drain to Source Voltage: 80V
• Current Continuous Drain: 19.8A (Ta), 80.8A (Tc)
• Rds on (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 40V
• Package/Case: PowerPAK® SO-8
• Supplier Device Package: PowerPAK® SO-8
• Temperature Range: -55°C to 150°C (TJ)
• Alternative Names: SIR826BDP-T1-RE3DKR, SIR826BDP-T1-RE3CT, SIR826BDP-T1-RE3TR
• MSL Level: 1 (unlimited)
• HTSUS: 8541.29.0095