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SIR836DP-T1-GE3

Part No SIR836DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 40V 21A PPAK SO-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 600pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.9W (Ta), 15.6W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 101667-SIR836DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SiR836DP
Introduction Date January 13, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SIR836DP-T1-GE3 CAD Model

Description

This Vishay MOSFET is a N-channel type electronic component that comes in a PowerPAK SO-8 package.

  • Power Dissipation: 3.9W (Ta) and 15.6W (Tc)
  • Continuous Drain Current: 21A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 19 mOhm @ 10A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5743 $51.6870
215+ $0.4712 $101.3080
330+ $0.4565 $150.6450
455+ $0.4417 $200.9735
590+ $0.4270 $251.9300
785+ $0.3829 $300.5765
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,125 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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