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Same model may have multiple batches, images only for reference.
SIR844DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR844DP-T1-GE3

Part No SIR844DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A PPAK SO-8
Datasheet
SIR844DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3215pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096482-SIR844DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR844DP-T1-GE3 CAD Model

Description

The Vishay electronic component is an N-channel MOSFET with a maximum power dissipation of 5W (Ta), 50W (Tc).

  • Type: discrete semiconductor product
  • Popularity: medium popularity
  • Supply and Demand Status: balanced
  • Win Source Part Number: 1096482-SIR844DP-T1-GE3
  • Mounting: SMD (SMT) technology
  • Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2794 $63.9700
115+ $1.0498 $120.7270
175+ $1.0170 $177.9750
235+ $0.9842 $231.2870
305+ $0.9514 $290.1770
410+ $0.8530 $349.7300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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