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SIR873DP-T1-GE3

Part No SIR873DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 37A PPAK SO-8
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET® Gen IV
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 47.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1805 pF @ 75 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR873
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 851706-SIR873DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIR873DP-T1-GE3 CAD Model

Description

The 851706-SIR873DP-T1-GE3 is a P-channel MOSFET transistor from Vishay's TrenchFET Gen IV series.

  • Vdss (Drain to Source Voltage): 150V
  • Id (Continuous Drain Current) @ 25°C: 37A
  • Rds On (Max) @ 10A, 10V Vgs: 47.5mOhm
  • Vgs(th) (Gate Threshold Voltage) @ 250μA: 4V
  • Power Dissipation @ Tc 25°C: 104W
  • Mounting Type: Surface Mount
  • Package: PowerPAK SO-8
  • Qg (Gate Charge) @ 10V: 48nC
  • Ciss (Input Capacitance) @ 75V Vds: 1805pF
  • Operating Temperature: -55°C to 150°C
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5278 $53.4730
70+ $1.4311 $100.1770
110+ $1.3827 $152.0970
160+ $1.2860 $205.7600
205+ $1.2377 $253.7285
255+ $1.1894 $303.2970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,600 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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