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SIR880ADP-T1-GE3

Name: SIR880ADP-T1-GE3
Brand: Vishay
SKU: 513243
Availability: InStock
Rating: 4.93 (48 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIR880ADP-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 80V 60A PPAK SO-8
Datasheet	SIR880ADP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	80V
Continuous Drain Current at 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	72nC @ 10V
Max Input Capacitance	2289pF @ 40V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs	6.3 mOhm @ 20A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SO-8
Dimension	PowerPAK SO-8
Win Source Part Number	1096485-SIR880ADP-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Sufficient
Family Name	SiR880ADP
Introduction Date	August 27, 2012
ECCN	EAR99
Country of Origin	China
Halogen Free	Compliant
Estimated EOL Date	2026
Ultra Librarian 3D Model	Ultra Librarian SIR880ADP-T1-GE3 CAD Model

Alternative Products

Description

The SIR880ADP-T1-GE3 electronic component is manufactured by Vishay and is a high popularity product.

Popularity: High
Type: MOSFET
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current: 60A @ 25°C
Maximum Gate-Source Voltage: ±20V
Maximum Rds On @ Id, Vgs: 6.3 mOhm @ 20A, 10V
Halogen-Free: Yes
Compliance: ECCN

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