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Same model may have multiple batches, images only for reference.
SIR890DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR890DP-T1-GE3

Part No SIR890DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A PPAK SO-8
Datasheet
SIR890DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2747pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 2.9 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096489-SIR890DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR890DP-T1-GE3 CAD Model

Description

The Vishay SIR890DP-T1-GE3 is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Power Dissipation: 5W (Ta) and 50W (Tc)
  • Mounting Technology: SMD (SMT)
  • Polarity: N-Channel
  • Category: Discrete Semiconductor Products
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Gate-Source Threshold Voltage: 2.6V @ 250μA
  • Status: Active
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Case/Package dimension: PowerPAK SO-8
  • Max Gate Charge: 60nC @ 10V
  • Max Input Capacitance: 2747pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 2.9 mOhm @ 10A, 10V
  • Supply and Demand Status: Balance

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