The SIRA54DP-T1-GE3 is an N-channel MOSFET from Vishay's TrenchFET Gen IV series. It is manufactured by Vishay.

• Drain to Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 60A @ 25°C
• Rds On (Max) @ Id, Vgs: 2.35mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250μA
• Power Dissipation (Max): 36.7W (Tc)
• Package: PowerPAK SO-8
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 20V
• Maximum Vgs: +20V, -16V
• Operating Temperature: -55°C to 150°C (TJ)
• Mounting: SMD (SMT)
• Packaging: Tape and Reel
• Discrete Semiconductor Product Category: MOSFET
• ECCN: EAR99
• MSL Level: Unlimited
• HTSUS: 8541.29.0095
• Other Names: SIRA54DP-T1-GE3CT, SIRA54DP-T1-GE3TR, SIRA54DP-T1-GE3DKR