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Same model may have multiple batches, images only for reference.
SIA911EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA911EDJ-T1-GE3

Part No SIA911EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.5A SC70-6
Datasheet
SIA911EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 101 mOhm @ 2.7A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 11nC @ 8V
Maximum Power Dissipation 7.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 119264-SIA911EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA911EDJ-T1-GE3 CAD Model

Description

The Vishay 2 P-Channel (Dual) FET is a logic level gate transistor with a maximum power dissipation of 7.8W.

  • Maximum Power Dissipation: 7.8W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 4.5A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 11nC @ 8V
  • Maximum Rds On at Id, Vgs: 101 mOhm @ 2.7A, 4.5V
  • Package: PowerPAK SC-70-6 Dual

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