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Same model may have multiple batches, images only for reference.
SIRA72DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIRA72DP-T1-GE3

Part No SIRA72DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 60A PPAK SO-8  /  N-Channel 40 V 60A (Tc) 56.8W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SIRA72DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 20 V
Power Dissipation (Max) 56.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA72
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIRA72DP-T1-GE3TR,SIRA72DP-T1-GE3DKR,SIRA72DP-T1-GE3CT
Standard Package 3,000
Win Source Part Number 1030780-SIRA72DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRA72DP-T1-GE3 CAD Model

Description

The Vishay Siliconix SIRA72DP-T1-GE3 is an N-channel MOSFET transistor in the TrenchFET Gen IV series.

  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 60 A @ 25°C
  • On-Resistance: 3.5 mOhm @ 10 A and 10 V
  • Package: PowerPAK SO-8
  • Gate Charge: 30 nC @ 4.5 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
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Availability: 4,550 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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