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SIRA90DP-T1-RE3

Part No SIRA90DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A PPAK SO-8  /  N-Channel 30 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 10180 pF @ 15 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA90
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIRA90DP-T1-RE3DKR,SIRA90DP-T1-RE3TR,SIRA90DP-T1-RE3-ND,SIRA90DP-T1-RE3CT
Standard Package 3,000
Win Source Part Number 990219-SIRA90DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIRA90DP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIRA90DP-T1-RE3 is an N-channel MOSFET with a drain to source voltage (Vdss) of 30 V and a continuous drain current (Id) of 100 A @ 25°C.

  • Manufacturer: Vishay Siliconix
  • Product Name: SIRA90DP-T1-RE3
  • Type: N-channel MOSFET
  • Vdss: 30 V
  • Id: 100 A @ 25°C
  • Rds On (Max) @ 20 A, 10 Vgs: 0.8 mΩ
  • Temperature Range: -55°C to 150°C
  • Qg @ 10 Vgs: 153 nC
  • Ciss @ 15 Vds: 10180 pF
  • RoHS: compliant and lead-free

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2003 $54.0135
105+ $0.9848 $103.4040
160+ $0.9541 $152.6560
220+ $0.9233 $203.1260
285+ $0.8925 $254.3625
375+ $0.8002 $300.0750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,342 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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