The Vishay Siliconix SIRC16DP-T1-GE3 is a MOSFET transistor with a drain to source voltage (Vdss) of 25V and a continuous drain current (Id) of 60A (Tc) @ 25°C.

• Maximum On-Resistance (Rds On): 0.96mOhm @ 15A and 10V
• Gate Threshold Voltage (Vgs(th)): 2.4V @ 250µA
• Power Dissipation: 54.3W (Tc)
• Gate Charge (Qg): 48 nC @ 4.5V
• Input Capacitance (Ciss): 5150 pF @ 10V
• Maximum Vgs: +20V and -16V
• Package/Case: PowerPAK® SO-8
• Mounting Type: Surface mountable
• Series: TrenchFET® Gen IV
• Supplier Device Package: PowerPAK® SO-8
• Alternative Part: SN74AC240DBR
• ECCN: EAR99