The SIS108DN-T1-GE3 is an N-Channel MOSFET from Vishay Siliconix.

• It is a member of the: TrenchFET® Gen IV series of products and is designed for use in electronic circuits.
• This MOSFET has a: drain to source voltage (Vdss) of 80 V and a continuous drain current (Id) of 6.7A (Ta), 16A (Tc) @ 25°C.
• The Rds On (Max) @ Id, Vgs is: 34mOhm @ 4A, 10V, and the Vgs(th) (Max) @ Id is 4V @ 250μA.
• The SIS108DN-T1-GE3 has a: power dissipation (Max) of 3.2W (Ta), 24W (Tc) and is supplied in a PowerPAK® 1212-8 package.
• It has an: input capacitance (Ciss) (Max) @ Vds of 545 pF @ 40 V, and a gate charge (Qg) (Max) @ Vgs of 13 nC @ 10 V.
• The device can operate over a: temperature range of -55°C to 150°C (TJ).