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Same model may have multiple batches, images only for reference.
TSM4N60ECH C5G Real Image
Same model may have multiple batches, images only for reference.

TSM4N60ECH C5G

Part No TSM4N60ECH C5G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 600V 4A TO251 / N-Channel 600 V 4A (Tc) 86.2W (Tc) Through Hole TO-251 (IPAK)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 25 V
FET Feature -
Power Dissipation (Max) 86.2W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number TSM4N60
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,750 pcs
Win Source Part Number 1383750-TSM4N60ECH C5G
Ultra Librarian 3D Model Ultra Librarian TSM4N60ECH C5G CAD Model

Description

The TSM4N60ECH C5G is an N-channel MOSFET transistor designed for high voltage applications, manufactured by Taiwan Semiconductor.

  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 4A @ 25°C
  • On-Resistance (Rds On): 2.5Ohm @ 2A, 10V
  • Gate Threshold Voltage (Vgs(th)): 5V @ 250μA
  • Power Dissipation: 86.2W @ Tc
  • Mounting Type: Through-Hole
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Gate Charge (Qg): 12nC @ 10V
  • Input Capacitance (Ciss): 545pF @ 25V

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