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Same model may have multiple batches, images only for reference.
SIS406DN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIS406DN-T1-GE3

Part No SIS406DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A 1212-8 PPAK
Datasheet
SIS406DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1100pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028771-SIS406DN-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIS406DN-T1-GE3 CAD Model

Description

This N-Channel MOSFET technology-based electronic component is a product manufactured by Vishay.

  • Mounting: SMD (SMT)
  • Packaging: PowerPAK 1212-8
  • Maximum Power Dissipation: 1.5W (Ta)
  • Continuous Drain Current: 9A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 28nC @ 10V
  • Popularity: 46% (medium)
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2583 $50.3685
415+ $0.2417 $100.3055
645+ $0.2333 $150.4785
925+ $0.2167 $200.4475
1,205+ $0.2083 $251.0015
1,500+ $0.2000 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,840 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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