The Vishay SIS436DN-T1-GE3 is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 25V and Continuous Drain Current @ 25°C of 16A (Tc).

• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 16A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 2.3V @ 250μA
• Maximum Gate Charge: 22nC @ 10V
• Maximum Rds On at Id,Vgs: 10.5 mOhm @ 10A, 10V
• Package: PowerPAK 1212-8
• Application: Discrete Semiconductor Products
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Popularity: 62 pct. (medium)
• Supply and Demand Status: balanced
• Halogen-free: Yes