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Same model may have multiple batches, images only for reference.
SIS454DN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIS454DN-T1-GE3

Part No SIS454DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 35A 1212-8 PPAK
Datasheet
SIS454DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 1900pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 064668-SIS454DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SIS454DN-T1-GE3 CAD Model

Description

The Vishay SIS454DN-T1-GE3 MOSFET is a high-quality MOSFET designed for use in electronic circuits.

  • Power Dissipation: 3.8W (Ta), 52W (Tc)
  • Package: PowerPAK 1212-8
  • Quantity per Package: 1000
  • MSL Level: 1 (Unlimited)
  • Applications: industrial and power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4065 $63.2925
90+ $1.3158 $118.4220
140+ $1.2704 $177.8560
200+ $1.1796 $235.9200
255+ $1.1344 $289.2720
320+ $1.0889 $348.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,900 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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