The SiS890DN-T1-GE3 is an N-channel MOSFET designed for use in discrete semiconductor products.

• Maximum Power Dissipation: 3.7W (Ta), 52W (Tc)
• Package: PowerPAK 1212-8
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 30A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 29nC @ 10V
• Maximum Input Capacitance: 802pF @ 50V
• Maximum Rds On @ Id,Vgs: 23.5 mOhm @ 10A, 10V
• Family: SiS890DN family
• Supply and Demand Status: Balanced