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SISA18JN-T1-GE3-A

Part No SISA18JN-T1-GE3-A
Manufacturer Vishay
Catalog OEM Parts ( S )
Description N-channel 30-V-(D-S) Mosfet
Sample
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Win Source Part Number 958601-SISA18JN-T1-GE3-A
Categories OEM Parts( S )
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SISA18JN-T1-GE3-A CAD Model

Description

The SISA18JN-T1-GE3-A is a TrenchFET® power MOSFET manufactured by Vishay. This N-channel MOSFET is designed for use in load switches, DC-DC converters, and other power management applications. The TrenchFET® technology provides low on-resistance (RDS(on)) and fast switching speeds, resulting in high efficiency and improved thermal performance.

Applications

  • Load Switching: Used to switch power to various loads in electronic circuits.
  • DC-DC Conversion: Employed as a switching element in DC-DC converters.
  • Power Management: Utilized in power management circuits for portable devices and other electronic equipment.
  • Battery Management Systems (BMS): Integrated into BMS for battery charging and discharging control.
  • Motor Control: Used in low-power motor control applications.

Features

  • N-Channel MOSFET: Provides efficient switching with low gate drive requirements.
  • TrenchFET® Technology: Offers low on-resistance (RDS(on)) and fast switching speeds.
  • Low Gate Charge (Qg): Reduces switching losses.
  • Small Footprint: Allows for easy integration into compact designs.
  • RoHS Compliant: Meets the requirements of the RoHS directive, ensuring environmental safety.

Benefits

  • High Efficiency: Low RDS(on) and low gate charge minimize power losses, improving overall system efficiency.
  • Improved Thermal Performance: Low RDS(on) reduces heat generation.
  • Fast Switching Speed: Enables high-frequency operation and reduces switching losses.
  • Simplified Circuit Design: Easy to drive and control, simplifying circuit design.
  • Cost-Effective Solution: Offers a cost-efficient way to improve the performance and reliability of power electronic systems.

Additional Details: The specific voltage and current ratings, RDS(on) at various gate voltages, gate charge, and thermal resistance should be obtained from the official Vishay datasheet for the SISA18JN-T1-GE3-A. The datasheet will also specify the gate threshold voltage. The -T1-GE3-A suffix designates specific packaging and environmental compliance characteristics, so consult the datasheet for accurate details.

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