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SISF04DN-T1-GE3

Part No SISF04DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs 4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 15V
Power - Max 5.2W (Ta), 69.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® 1212-8SCD
Supplier Device Package PowerPAK® 1212-8SCD
Base Product Number SISF04
Other Names 742-SISF04DN-T1-GE3TR,742-SISF04DN-T1-GE3CT,742-SISF04DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278510-SISF04DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISF04DN-T1-GE3 CAD Model

Description

The SISF04DN-T1-GE3 is a dual N-channel MOSFET array with a drain to source voltage rating of 30V and a continuous drain current rating of 30A @ 25°C.

  • On-Resistance: 4mOhm @ 7A and 10V
  • Gate Charge: 60nC @ 10V
  • Package: PowerPAK® 1212-8SCD package
  • Mounting: Surface mount technology
  • Operating Temperature Range: -55°C to 150°C
  • ECCN: ECCN compliant
  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET® Gen IV series

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8797 $52.7820
140+ $0.7219 $101.0660
215+ $0.6993 $150.3495
300+ $0.6767 $203.0100
385+ $0.6542 $251.8670
515+ $0.5865 $302.0475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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