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SISH108DN-T1-GE3

Part No SISH108DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen II
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) ±16V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
Base Product Number SISH108
Other Names SISH108DN-T1-GE3TR,SISH108DN-T1-GE3CT,SISH108DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277681-SISH108DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISH108DN-T1-GE3 CAD Model

Description

The SISH108DN-T1-GE3 is an N-Channel MOSFET designed for use in power management applications.

  • Drain to Source Voltage (Max): 20V
  • Continuous Drain Current (Max) @ 25°C: 14A
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
  • Power Dissipation (Max): 1.5W (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: PowerPAK 1212-8SH
  • Packaging: tape and reel
  • Manufacturer: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,270 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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