This electronic component is a MOSFET (Metal Oxide) N-channel FET type manufactured by Vishay Siliconix.

• Series: TrenchFET® Gen IV
• Package: PowerPAK® 1212-8S
• Standard Package: 3,000
• Mounting: SMD (SMT)
• Drain to Source Voltage (Vdss): 25V
• Continuous Drain Current (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
• Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 12.5 V
• Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
• Vgs(th) (Max) @ Id: 2.2V @ 250μA