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Same model may have multiple batches, images only for reference.
SISS22DN-T1-GE3Vishay Siliconix
Same model may have multiple batches, images only for reference.

SISS22DN-T1-GE3

Part No SISS22DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 25A/90.6A PPAK
Datasheet
SISS22DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1201185-SISS22DN-T1-GE3
Win Source Part Number Cross
Manufacturer Vishay Siliconix
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series TrenchFET® Gen IV
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 90.6A (Tc)
Ultra Librarian 3D Model Ultra Librarian SISS22DN-T1-GE3 CAD Model

Description

The TrenchFET Gen IV series from Vishay Siliconix offers high-performance N-channel MOSFETs for various applications.

  • Series: TrenchFET Gen IV
  • Manufacturer: Vishay Siliconix
  • MOSFET Type: N-channel
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C (Ta): 25A
  • Continuous Drain Current (Id) @ 25°C (Tc): 90.6A
  • Packaging Options: Tape & reel, cut tape, and Digi-Reel
  • Product Status: Active

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