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SISS92DN-T1-GE3

Part No SISS92DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 125 V
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS92
Other Names SISS92DN-T1-GE3TR,SISS92DN-T1-GE3DKR,SISS92DN-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277604-SISS92DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS92DN-T1-GE3 CAD Model

Description

The SISS92DN-T1-GE3 is a N-channel MOSFET transistor from Vishay Siliconix's TrenchFET series.

  • Drain to Source Voltage (Vdss): 250 V
  • Continuous Drain Current (Id): 3.4A (Ta), 12.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 173mOhm @ 3.6A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 125 V
  • Package: PowerPAK 1212-8S
  • Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99 compliant
  • Suitable for: various electronic applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7314 $52.3884
14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7165 $201.4950
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,150 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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