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SIUD403ED-T1-GE3

Part No SIUD403ED-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen III
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.25Ohm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 31 pF @ 10 V
Power Dissipation (Max) 1.25W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 0806
Package / Case PowerPAK® 0806
Base Product Number SIUD403
Other Names SIUD403ED-T1-GE3DKR,SIUD403ED-T1-GE3TR,SIUD403ED-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277679-SIUD403ED-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIUD403ED-T1-GE3 CAD Model

Description

The SIUD403ED-T1-GE3DKR is a P-Channel MOSFET transistor from Vishay Siliconix.

  • Series: TrenchFET® Gen III
  • Package: PowerPAK® 0806
  • Drain to Source Voltage (Vdss): 20 V
  • Continuous Drain Current (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250μA
  • Gate Charge (Qg) (Max): 1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
  • Power Dissipation: 1.25W (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4205 $50.4600
290+ $0.3451 $100.0790
450+ $0.3343 $150.4350
620+ $0.3235 $200.5700
800+ $0.3127 $250.1600
1,070+ $0.2804 $300.0280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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