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SIUD412ED-T1-GE3

Part No SIUD412ED-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 340mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.71 nC @ 4.5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 6 V
Power Dissipation (Max) 1.25W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 0806
Package / Case PowerPAK® 0806
Base Product Number SIUD412
Other Names SIUD412ED-T1-GE3TR,SIUD412ED-T1-GE3DKR,SIUD412ED-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277605-SIUD412ED-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIUD412ED-T1-GE3 CAD Model

Description

The SIUD412ED-T1-GE3 MOSFET is a N-Channel FET with a drain to source voltage of 12 V.

  • Continuous Drain Current: 500mA (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250μA
  • Mounting: SMD (SMT)
  • Package: PowerPAK® 0806
  • Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
  • Suitable for: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2328 $50.0520
525+ $0.1910 $100.2750
815+ $0.1850 $150.7750
1,120+ $0.1791 $200.5920
1,445+ $0.1731 $250.1295
1,935+ $0.1552 $300.3120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 102,935 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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