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Same model may have multiple batches, images only for reference.
SIZ250DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ250DT-T1-GE3

Part No SIZ250DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIZ250DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 30V, 790pF @ 30V
Power - Max 4.3W (Ta), 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (3.3x3.3)
Base Product Number SIZ250
Other Names 742-SIZ250DT-T1-GE3TR,742-SIZ250DT-T1-GE3DKR,742-SIZ250DT-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278499-SIZ250DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZ250DT-T1-GE3 CAD Model

Description

The Vishay Siliconix SIZ250DT-T1-GE3 MOSFET is a dual N-Channel FET with a drain to source voltage of 60V and a continuous drain current of 14A at 25°C.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 14A @ 25°C
  • Low Rds On: 12.2mOhm @ 10A, 10V and 12.7mOhm @ 10A, 10V
  • Gate Charge: 21nC @ 10V
  • Input Capacitance: 840pF @ 30Vds

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0734 $53.6700
115+ $0.8808 $101.2920
180+ $0.8533 $153.5940
245+ $0.8257 $202.2965
315+ $0.7982 $251.4330
420+ $0.7156 $300.5520
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