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Same model may have multiple batches, images only for reference.
SIZ322DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ322DT-T1-GE3

Part No SIZ322DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIZ322DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 6.35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 12.5V
Power - Max 16.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerWDFN
Supplier Device Package 8-Power33 (3x3)
Base Product Number SIZ322
Other Names SIZ322DT-T1-GE3DKR,SIZ322DT-T1-GE3CT,SIZ322DT-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278500-SIZ322DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZ322DT-T1-GE3 CAD Model

Description

The Vishay Siliconix 1278500-SIZ322DT-T1-GE3 is a dual N-channel MOSFET transistor that is part of the TrenchFET® Gen IV series.

  • Maximum Drain to Source Voltage: 25V
  • Continuous Drain Current: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
  • Package Type: 8-PowerWDFN
  • Packaging: Tape and Reel
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)

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