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Same model may have multiple batches, images only for reference.
SIZ350DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ350DT-T1-GE3

Part No SIZ350DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIZ350DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs 6.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 15V
Power - Max 3.7W (Ta), 16.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerWDFN
Supplier Device Package 8-Power33 (3x3)
Base Product Number SIZ350
Other Names SIZ350DT-T1-GE3TR,SIZ350DT-GE3,SIZ350DT-T1-GE3CT,SIZ350DT-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278504-SIZ350DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZ350DT-T1-GE3 CAD Model

Description

The SIZ350DT-T1-GE3 is a TrenchFET® Gen IV series dual N-Channel MOSFET transistor array designed for use in discrete semiconductor products.

  • Package: Tape & Reel
  • Standard Package: 3,000
  • Mounting: SMD (SMT)
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
  • Temperature Range: -55°C to 150°C (TJ)

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