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Same model may have multiple batches, images only for reference.
SIZ700DT-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIZ700DT-T1-GE3

Part No SIZ700DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 16A PPAK 1212-8
Datasheet
SIZ700DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 16A
Maximum Rds On at Id,Vgs 8.6 mOhm @ 15A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1300pF @ 10V
Maximum Power Dissipation 2.36W, 2.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PowerPair
Win Source Part Number 064670-SIZ700DT-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIZ700DT-T1-GE3 CAD Model

Description

The Vishay 064670-SIZ700DT-T1-GE3 is a standard 2 N-Channel (Half Bridge) FET type electronic component with a maximum power dissipation of 2.36W and 2.8W.

  • Maximum Power Dissipation: 2.36W and 2.8W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 16A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 1300pF @ 10V
  • Maximum Rds On @ Id,Vgs: 8.6 mOhm @ 15A, 10V
  • Package: 6-PowerPair
  • Operating Temperature: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.5595 $60.4760
19+ $6.2035 $117.8665
29+ $6.0095 $174.2755
40+ $5.8154 $232.6160
52+ $5.6214 $292.3128
69+ $5.0404 $347.7876
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,600 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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