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Same model may have multiple batches, images only for reference.
SIZ910DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ910DT-T1-GE3

Part No SIZ910DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 40A POWERPAIR
Datasheet
SIZ910DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A
Maximum Rds On at Id,Vgs 5.8 mOhm @ 20A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1500pF @ 15V
Maximum Power Dissipation 48W, 100W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PowerPair
Win Source Part Number 115708-SIZ910DT-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIZ910DT-T1-GE3 CAD Model

Description

The SIZ910DT-T1-GE3 is an N-channel half-bridge type of electronic component manufactured by Vishay.

  • Type: N-channel half-bridge
  • Package: 8-PowerPair
  • Mounting: Surface
  • Maximum Power Dissipation: 48W, 100W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1500pF @ 15V
  • Maximum Rds: 5.8 mOhm @ 20A, 10V
  • Supply and Demand Status: balanced
  • Operating Temperature Range: -55°C to 150°C (TJ)

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