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SQ1563AEH-T1_GE3

Part No SQ1563AEH-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 850mA (Tc)
Rds On (Max) @ Id, Vgs 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.25nC @ 4.5V, 1.33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 89pF @ 10V, 84pF @ 10V
Power - Max 1.5W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SQ1563
Other Names SQ1563AEH-T1_GE3DKR,SQ1563AEH-T1_GE3CT,SQ1563AEH-T1_GE3,SQ1563AEH-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278495-SQ1563AEH-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQ1563AEH-T1_GE3 CAD Model

Description

The Vishay Siliconix 1278495-SQ1563AEH-T1_GE3 is a TrenchFET® series N and P-Channel MOSFET array designed for discrete semiconductor products.

  • Drain to Source Voltage: 20V
  • Maximum Rds On: 280mOhm @ 850mA, 4.5V, and 575mOhm @ 800mA, 4.5V
  • Maximum Vgs(th): 1.5V @ 250µA
  • Maximum Power: 1.5W
  • Gate Charge (Qg): 1.25nC @ 4.5V and 1.33nC @ 4.5V
  • Input Capacitance (Ciss): 89pF @ 10V and 84pF @ 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2933 $51.3275
420+ $0.2407 $101.0940
645+ $0.2331 $150.3495
890+ $0.2256 $200.7840
1,150+ $0.2181 $250.8150
1,535+ $0.1955 $300.0925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 680,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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