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SQ2301ES-T1_GE3

Part No SQ2301ES-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.9A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Series Automotive, AEC-Q101, TrenchFET
Packaging Reel - TR
Channel Type Type P
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 425pF @ 10V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 3W (Tc)
Rds On (Maximum) @ Id, Vgs 120 mOhm @ 2.8A, 4.5V
Operating Temperature Range -55°C ~ 175°C (TA)
Mounting SMD
Manufacturer Package TO-236 (SOT-23)
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Homepage www.vishay.com
Win Source Part Number 720536-SQ2301ES-T1_GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQ2301ES-T1_GE3 CAD Model

Description

The Vishay SQ2301ES-T1_GE3 is a TrenchFET MOSFET designed for use in a variety of applications, such as power supplies, motor control, and lighting. It has a P-channel type and a drain-source voltage of 20V.

  • Channel Type: P-channel
  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 3.9A @ 25°C
  • Maximum Power Dissipation: 3W (Tc)
  • Gate-Source Threshold Voltage: 1.5V
  • Gate Charge: 8nC @ 4.5V
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2246 $50.5350
480+ $0.2102 $100.8960
740+ $0.2029 $150.1460
1,065+ $0.1884 $200.6460
1,380+ $0.1812 $250.0560
1,730+ $0.1739 $300.8470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,419 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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